symbol v ds v gs i dm t j , t stg symbol ty p max 64 83 89 120 r jl 53 70 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 8 gate-source voltage drain-source voltage 20 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 5.4 30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.5 1.08 -55 to 150 t a =70c i d 6.4 AO8806 features v ds (v) = 20v i d = 6 a r ds(on) < 25m ? (v gs = 4.5v) r ds(on) < 30m ? (v gs = 2.5v) r ds(on) < 40m ? (v gs = 1.8v) the AO8806 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a uni-directional or bi- directional load switch, facilitated by its common- drain configuration. g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 1 2 3 4 8 7 6 5 g1 d1 s1 g2 d2 s2 tssop-8 top view general description common-drain dual n-channel enhancement mode field effect transistor www.freescale.net.cn 1 / 4
AO8806 symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 100 na v gs(th) 0.4 0.6 1 v i d(on) 30 a 19.3 25 t j =125c 27.6 35 24 30 m ? 30.5 40 m ? g fs 15 23 s v sd 0.76 1 v i s 2.5 a c iss 940 pf c oss 157 pf c rss 133 pf q g 15 nc q gs 1nc q gd 4nc t d(on) 6.5 ns t r 9ns t d(off) 56.5 ns t f 13.2 ns t rr 22.4 ns q rr 8.4 nc body diode reverse recovery time body diode reverse recovery charge i f =6a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =6a reverse transfer capacitance i f =6a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =16v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage gate source charge m ? v gs =2.5v, i d =5a i s =1a,v gs =0v v ds =5v, i d =5a v gs =1.8v, i d =4a turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =1.8 ? , r gen =6 ? turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =10v, f=1mhz gate drain charge switching parameters total gate charge v gs =4.5v, v ds =10v, i d =6a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2 / 4
AO8806 typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 8v 3v 4.5v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 1.00 1.20 1.40 1.60 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =1.8v v gs =4.5v v gs =2.5v 10 15 20 25 30 35 40 45 50 55 60 02468 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =1.8v v gs =2.5v v gs =4.5v i d =6a 25c 125c i d =6a www.freescale.net.cn 3 / 4
AO8806 typical electrical and thermal characteristics 0 1 2 3 4 5 024681012141618 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 1750 2000 0 5 10 15 20 c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 10ms 1ms 0 .1 s 1s 1 0s d c r ds(on) limited t j(max) =150c t a =25c v ds =10v i d =6a single pulse d=t o n / t t j,pk =t a +p dm .z t ja .r t ja r t ja =83c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 p s www.freescale.net.cn 4 / 4
|
